Figure 1 from Fabrication characteristics of 1.2kV SiC JBS diode | Semantic Scholar
Improved JBS structure to reduce the leakage current and increase the surge current capability | Toshiba Electronic Devices & Storage Corporation | Asia-English
Schematic of the investigated 4H-SiC JBS diode. | Download Scientific Diagram
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4.4.3.1 MPS Diode Structure
Improved JBS structure to reduce the leakage current and increase the surge current capability | Toshiba Electronic Devices & Storage Corporation | Asia-English
Schottky Diode: Definition, Working & Characteristics - The Engineering Projects